all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 9 rev. 07, 2015-03-03 PTFA211801E confidential, limited internal distribution rf characteristics wcdma measurements (tested in infneon test fxture) v dd = 28 v, i dq = 1.2 a, p out = 35 w average, ? 1 = 2135 mhz, ? 2 = 2145 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 14.5 15.5 db drain effciency h d 26 27.5 % intermodulation distortion imd C36 C34 dbc thermally-enhanced high power rf ldmos fet 180 w, 2110 C 2170 mhz description the PTFA211801E is a thermally-enhanced, 180-watt, internally matched ldmos fet intended for wcdma applications. it is characaterized for single- and two-carrier wcdma operation from 2110 to 2170 mhz. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. features ? broadband internal matching ? typical two-carrier wcdma performance at 2140 mhz, 28 v - average output power = 45.5 dbm - linear gain = 15.5 db - effciency = 27.5% - intermodulation distortion = C36 dbc - adjacent channel power = C41 dbc ? typical cw performance, 2170 mhz, 30 v - output power at p 1db = 180 w - effciency = 52% ? integrated esd protection ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 150 w (cw) output power ? pb-free and rohs-compliant PTFA211801E package h-36260-2 0 5 10 15 20 25 30 - 55 - 50 - 45 - 40 - 35 - 30 - 25 34 36 38 40 42 44 46 48 drain efficiency (%) im3 (dbc), acpr (dbc) average output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1.2 a, ? = 2140 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing acpr efficiency im3 not recommended for new design
data sheet 2 of 9 rev. 07, 2015-03-03 PTFA211801E confidential, limited internal distribution rf characteristics (cont.) cw measurements (tested in infneon test fxture) v dd = 28 v, i dq = 1.2 a, p out = 150 w average, ? = 2170 mhz characteristic symbol min typ max unit gain compression g comp 0.5 1.0 db two-tone measurements (not subject to production testverifed by design/characterization in infneon test fxture) v dd = 28 v, i dq = 1.2 a, p out = 140 w pep, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 15.5 db drain effciency h d 38.5 % intermodulation distortion imd C28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 28 v, i dq = 1.2 a v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C0.5 to +12 v junction temperature t j 200 c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70c, 150 w cw) r qjc 0.31 c/w not recommended for new design
PTFA211801E confidential, limited internal distribution data sheet 3 of 9 rev. 07, 2015-03-03 ordering information type and version package outline package description shipping PTFA211801E v5 h-36260-2 thermally-enhanced slotted fange, single-ended tray PTFA211801E v5 r250 h-36260-2 thermally-enhanced slotted fange, single-ended tape & reel typical performance (data taken in a production test fxture) -30 -25 -20 -15 -10 -5 5 10 15 20 25 30 2070 2090 2110 2130 2150 2170 2190 2210 input return loss (db) gain (db), efficiency (%) frequency (mhz) broadband performance v dd = 28 v, i dq = 1.2 a, p o ut = 45.0 dbm cw gain efficiency return loss -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 48 3rd order imd (dbc) output power, avg. (dbm) two-carrier wcdma at various biases 1.2 a 1.4 a 1.1 a 1.3 a v dd = 28 v, ? = 2140 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, series show i dq not recommended for new design
data sheet 4 of 9 rev. 07, 2015-03-03 PTFA211801E confidential, limited internal distribution typical performance (cont.) 8 21 34 47 60 13 14 15 16 17 0 20 40 60 80 100 120 140 160 180 drain efficiency (%) gain (db) output power (w) power sweep, cw conditions v dd = 28 v, i dq = 1.2 a, ? = 2170 mhz gain efficiency t ca s e = 25 c t ca s e = 90 c 0 10 20 30 40 50 60 12 13 14 15 16 17 18 0 20 40 60 80 100 120 140 160 180 gain (db) output power (w) power sweep, cw conditions v dd = 30 v, i dq = 1.2 a, ? = 2170 mhz gain efficiency - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 0 5 10 15 20 25 30 35 40 intermodulation distortion (dbc) tone spacing (mhz) intermodulation distortion products vs. tone spacing v dd = 28 v i dq = 1.2 a, ? = 2140 mhz, p o ut = 51 dbm pep 3rd order 5th 7th 0 5 10 15 20 25 30 35 40 45 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 38 42 46 50 54 drain efficiency (%) output power, pep (dbm) two - tone drive - up v dd = 28 v, i dq = 1.2 a, ? = 2140 mhz, tone spacing = 1 mhz intermodulation distortion (dbc) im5 im7 im3 efficiency not recommended for new design
r e v . 0 7 , 2 0 1 5 - 0 3 - 0 3
data sheet 6 of 9 rev. 07, 2015-03-03 PTFA211801E confidential, limited internal distribution reference circuit reference circuit schematic for ? = 2140 mhz electrical characteristics at 2140 mhz transmission electrical dimensions: l x w (mm) dimensions: l x w (in.) line characteristics l1 0.097 l, 50.0 w 7.37 x 1.40 0.290 x 0.055 l2 0.267 l, 50.0 w 19.86 x 1.40 0.782 x 0.055 l3 0.136 l, 42.0 w 10.24 x 1.85 0.403 x 0.073 l4 0.087 l, 42.0 w 6.50 x 1.85 0.256 x 0.073 l5 0.018 l, 11.4 w 1.24 x 10.24 0.049 x 0.403 l6 0.077 l, 6.9 w 5.23 x 17.78 0.206 x 0.700 l7 0.207 l, 48.0 w 15.70 x 1.50 0.618 x 0.059 l8, l 9 0.256 l, 45.0 w 19.30 x 1.65 0.760 x 0.065 l10 0.087 l, 5.0 w 5.84 x 25.40 0.230 x 1.000 l11 (taper) 0.073 l, 5.0 w / 40.0 w 5.59 x 25.40 / 1.98 0.220 x 1.000 / 0.078 l12 0.019 l, 40.0 w 1.45 x 1.98 0.057 x 0.078 l13 0.087 l, 50.0 w 6.65 x 1.40 0.262 x 0.055 l14 0.403 l, 50.0 w 30.73 x 1.40 1.210 x 0.055 a211801ef _sch 8.2pf 1f 0.5pf 9.1pf 0.02f 22f 1f l 1 l 3 l 4 l 6 l 8 l 9 l 10 du t c12 c13 c14 c15 c9 c19 c18 c17 c16 l 11 5 0v l 7 l 2 0.1 f c6 0.1f c5 r6 10f 35v c4 5.1k ? r7 .01f c7 9.1pf c8 c10 5.1k ? l 5 c11 r 8 5.1k ? 10 r9 ? 1.5pf c21 8.2pf l 14 l 12 c2 0 0.3pf l 13 r5 1 0 ? 0.02f 22f 50v 9.1pf r3 2k ? r4 2k ? c3 0.001f c2 0.001f bcp56 r2 1.3k ? r1 1.2k ? lm7805 c1 0.001f qq1 q1 v dd v dd rf_out rf_in not recommended for new design
PTFA211801E confidential, limited internal distribution data sheet 7 of 9 rev. 07, 2015-03-03 reference circuit (cont.) reference circuit assembly diagram (not to scale)* * gerber files for this circuit available on request a211801ef _assy 10 35v + lm rf_in rf_out circuit assembly information dut PTFA211801E ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper component description suggested manufacturer p/n c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5, c6 capacitor, 0.1 f digi-key pcc104bct c7 capacitor, 0.01 f atc 200b103 c8, c12, c16 ceramic capacitor, 9.1 pf atc 100b 9r1 c9 ceramic capacitor, 0.5 pf atc 100b 0r5 c10, c21 ceramic capacitor, 8.2 pf atc 100b 8r2 c11 ceramic capacitor, 1.5 pf atc 100b 1r5 c13, c17 ceramic capacitor, 0.02 f atc 200b 203 c14, c18 ceramic capacitor, 1 f atc 920c105 c15, c19 electrolytic capacitor, 22 f, 50 v digi-key pce3374ct-nd c20 ceramic capacitor, 0.3 pf atc 100b 0r3 q1 transistor infneon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k w digi-key p1.2kgct-nd r2 chip resistor, 1.3 k w digi-key p1.3kgct-nd r3 chip resistor, 2 k w digi-key p2kect-nd r4 potentiometer, 2 k w digi-key 3224w-202etr-nd r5, r9 chip resistor, 10 w digi-key p10ect-nd r6, r7, r8 chip resistor, 5.1 k w digi-key p5.1kect-nd not recommended for new design
data sheet 8 of 9 rev. 07, 2015-03-03 PTFA211801E confidential, limited internal distribution package outline specifcations package h-36260-2 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower 23.370.51 [.920.020] 13.72 [.540] 2x 12.70 [.500] 34.04 [1.340] lid 22.350.23 [.880.009] 4.110.38 [.162.015] 1.02 [.040] c l l c d g s l c 45 x 2.031 45 x [.080] 4.830.50 [.190.020] lid 13.21 +0. 10 C0.15 [ .520 +.004 C.006 ] 4x r1.52 [r.060] 2x r1.63 [r.064] sph 1.57 [.062] 27.94 [1.100] h -36260 - 2_ po _02 -18 - 2010 ldudp1rhvxqohvvrkhulvhvshflhg 1. interpret dimensions and tolerances per asme y14.5m-1994. 3ulpduglphqvlrqvduhppowhuqdwhglphqvlrqvduhlqfhv oowrohudqfhv@qohvvvshflhgrwhuzlvh 3lqv gudlq6 vrufh jdwh /hdgwlfqhvv@ rogsodwlqjwlfqhvvplfurqplfurlqf@ not recommended for new design
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